By measuring the spontaneous emission from normally operating /spl sim/1.3 /spl mu/m GaInNAs/GaAs-based lasers we have quantitatively determined the variation of each of the current paths present in the devices as a function of temperature from 130 K to 370 K.


    Access

    Check access

    Check availability in my library

    Order at Subito €


    Export, share and cite



    Title :

    Experimental and theoretical analysis of the recombination processes in GaInNs 1.3 /spl mu/m lasers


    Contributors:
    Tomic, S. (author) / Fehse, R. (author) / Choulis, S.A. (author) / O'Reilly, E.P. (author) / Adams, A.R. (author) / Sweeney, S.J. (author) / Andreev, A.D. (author) / Hosea, T.J.C. (author) / Riechert, H. (author)


    Publication date :

    2002-01-01


    Size :

    145566 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



    Experimental and Theoretical Analysis of the Recombination Processes in GaInNAs 1.3 mum Lasers

    Institute of Electrical and Electronics Engineers | British Library Conference Proceedings | 2002


    Experimental and Theoretical Analysis of Dynamical Regimes for Optically Injected Microdisk Lasers

    Ma, X. / Huang, Y. / Long, H. et al. | British Library Online Contents | 2016



    Theoretical analyses and experimental studies on semiconductor disk lasers

    Song, Y. / Zhang, P. / Zhang, X. et al. | British Library Online Contents | 2009


    Helium-like recombination pumped soft x-ray lasers

    Ozaki, T. / Orimo, S. / Kuroda, H. | British Library Online Contents | 1996