We present a novel waveguide electroabsorption modulator (EAM), integrated into the collector region of a heterostructure bipolar transistor (HBT). The novel device shows an optical modulation contrast of 7.5 dB and a 3 dB cut-off frequency of 7 GHz.


    Access

    Check access

    Check availability in my library

    Order at Subito €


    Export, share and cite



    Title :

    A novel 1.55 /spl mu/m HBT-electroabsorption modulator


    Contributors:
    Schneider, M. (author) / Reimann, T. (author) / Heinzelmann, R. (author) / Stohr, A. (author) / Velling, P. (author) / Neumann, S. (author) / Bertenburg, R.M. (author) / Tegude, F.-J. (author) / Jager, D. (author)


    Publication date :

    2002-01-01


    Size :

    422519 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



    Stacked-diode Electroabsorption Modulator

    IEEE; Lasers and Electro-Optics Society | British Library Conference Proceedings | 1994


    Novel Dynamic Bias Control of Electroabsorption Waveguide Modulator

    IEEE; Lasers and Electro-Optics Society | British Library Conference Proceedings | 1997


    60-GHz band electroabsorption modulator module

    Mineo, N. / Yamada, K. / Nakamura, K. et al. | IEEE | 1998


    Predistortion of Electroabsorption Modulators for Analog CATV Systems at 1.55 m

    Wilson, G. C. / Wood, T. H. / Gans, M. et al. | British Library Online Contents | 1997


    DFB lasers with integrated electroabsorption modulator

    Binsma, J. J. M. / Kuindersma, P. I. / Van Gestel, P. et al. | British Library Online Contents | 1996