We present a novel waveguide electroabsorption modulator (EAM), integrated into the collector region of a heterostructure bipolar transistor (HBT). The novel device shows an optical modulation contrast of 7.5 dB and a 3 dB cut-off frequency of 7 GHz.
A novel 1.55 /spl mu/m HBT-electroabsorption modulator
2002-01-01
422519 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
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