Light emitting spatial inhomogeneity in InGaN/GaN multiple quantum well (MQW) blue and green LEDs were observed directly with a microscope. Electroluminescence (EL) spectra of InGaN/GaN QW blue and green LEDs were studied in the temperature range of 10-300 K at an injection current of 5 mA. Some anomalous behavior was observed. Intensity of the EL main peak increased monotonically with temperature from 10 to 200 K and slightly decreased with further temperature increase in the 200 K range. This is in contrast with the monotonic decrease of EL with increasing temperature for conventional AlGaInP QW red LEDs. The anomalous behavior can only be observed on InGaN/GaN systems. The origin of such behaviors was discussed using a model of quantum dot clusters in the InGaN/GaN pseudo-quantum wells, with a small potential barrier at the boundary of the quantum dots.


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    Title :

    Comparison of temperature dependent electroluminescence of InGaN/GaN and AlGaInP based LEDs


    Contributors:
    Liang, H. (author) / Yu, L.S. (author) / Qi, Y.D. (author) / Wang, D. (author) / Lu, Z.D. (author) / Tang, W. (author) / Lau, K.M. (author) / Yang, C.L. (author) / Wang, J.N. (author) / Ge, W.K. (author)


    Publication date :

    2003-01-01


    Size :

    216087 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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