The optical properties of the very thin layer semiconductor structure CdTe/ZnSe are investigated using temperature dependent photoluminescence and spectrally resolved three-pulse two-colour femtosecond photon echo measurements. The temperature dependence of the photoluminescence, the wavelength dependence of the dephasing of excited carriers, and the homogeneous broadening of the energy levels shown the luminescence of quantum dots in this samples.


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    Title :

    The optical properties of very thin-layer CdTe/ZnSe


    Contributors:
    Lap Van Dao, (author) / Makino, H. (author) / Takai, T. (author) / Lowe, M. (author) / Hannaford, P. (author) / Yao, T. (author)


    Publication date :

    2002-01-01


    Size :

    250643 byte





    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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