Theoretical analysis of CdF/sub 2/-CaF/sub 2/ heterostructure intersubband transition lasers on Si substrates was carried out and their threshold current density was estimated. We found that these lasers make 1.35 /spl mu/m operation feasible due to their large conduction band discontinuity at the CdF/sub 2/-CaF/sub 2/ heterointerfaces and the large optical confinement factor they exhibit when Si optical confinement layers are used. With active quantum wells of 10 periods their threshold current density is 350 A/cm/sup 2/ even at room temperature.


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    Title :

    Feasibility study of CdF/sub 2//CaF/sub 2/ intersubband transition lasers


    Contributors:
    Watanabe, M. (author) / Sakamaki, N. (author) / Ishikawa, T. (author)


    Publication date :

    2001-01-01


    Size :

    174455 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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