We report that a blue LED was successfully fabricated oil a bounded InGaN/GaN/Si wafer, in which the InGaN/GaN epilayer was originally grown on a sapphire substrate then bonded and transferred to a Si substrate by laser liftoff technique.
Blue light-emitting diode fabrication of an InGaN/GaN epilayer bonded on a Si substrate by laser liftoff
2001-01-01
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Conference paper
Electronic Resource
English
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