We report that a blue LED was successfully fabricated oil a bounded InGaN/GaN/Si wafer, in which the InGaN/GaN epilayer was originally grown on a sapphire substrate then bonded and transferred to a Si substrate by laser liftoff technique.


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    Title :

    Blue light-emitting diode fabrication of an InGaN/GaN epilayer bonded on a Si substrate by laser liftoff


    Contributors:
    Chen, C.C. (author) / Hsu, M.C. (author) / Hsiao, J.R. (author) / Yen, J.L. (author) / Yang, Y.J. (author) / Lin, C.H. (author) / Wang, L.A. (author) / Liu, C.C. (author)


    Publication date :

    2001-01-01


    Size :

    121053 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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