An evanescently-coupled-photodiode with partially p-doped photo-absorption layer was demonstrated and designed by a bandwidth simulation model to optimize its speed performance. Excellent performance of speed, saturation-power, and responsivity can be achieved simultaneously at 1.55 /spl mu/m wavelength.


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    Title :

    Design and demonstration of high-power and high-speed evanescently coupled photodiodes with partially p-doped photo-absorption layer


    Contributors:
    Wu, Y.-S. (author) / Shi, J.-W. (author) / Wu, J.-Y. (author) / Huang, F.-H. (author) / Chan, Y.-J. (author) / Huang, Y.-L. (author) / Xuan, R. (author)


    Publication date :

    2005-01-01


    Size :

    456801 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English