A novel two-stage laser-induced quantum well intermixing process has been developed in InGaAs/InGaAsP heterostructures. Based on the process, a maximum wavelength shift of 170 nm was observed. Low-loss intermixed waveguides were demonstrated at 1.55 /spl mu/m.
Two-stage laser-induced-intermixing process for passive and active integration in InGaAs/InGaAsP heterostructures
2004-01-01
101453 byte
Conference paper
Electronic Resource
English
British Library Conference Proceedings | 2004
|British Library Conference Proceedings | 1998
|British Library Conference Proceedings | 2000
|