A novel two-stage laser-induced quantum well intermixing process has been developed in InGaAs/InGaAsP heterostructures. Based on the process, a maximum wavelength shift of 170 nm was observed. Low-loss intermixed waveguides were demonstrated at 1.55 /spl mu/m.


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    Title :

    Two-stage laser-induced-intermixing process for passive and active integration in InGaAs/InGaAsP heterostructures


    Contributors:


    Publication date :

    2004-01-01


    Size :

    101453 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



    Two-Stage Laser-Induced Intermixing Process for Passive and Active Integration in InGaAs/InGaAsP Heterostructures

    Lasers and Electro-optics Society (Institute of Electrical and Electronics Engineers) | British Library Conference Proceedings | 2004




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    Haysom, J. E. / He, J. H. / Poole, P. J. et al. | British Library Conference Proceedings | 1998