In(Ga)As/GaAs quantum-dot lasers with emission wavelength at 1295 nm at room temperature are fabricated. The highest relaxation oscillation frequency measured at room temperature is 1.8 GHz, corresponding to a modulation bandwidth of 2.8 GHz.


    Access

    Check access

    Check availability in my library

    Order at Subito €


    Export, share and cite



    Title :

    1.3 /spl mu/m ln(Ga)As/GaAs quantum-dot lasers and their dynamic properties


    Contributors:
    Mao, M.-H. (author) / Wu, T.-Y. (author) / Chang, F.-Y. (author) / Lin, H.-H. (author)


    Publication date :

    2003-01-01


    Size :

    113553 byte





    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



    1.3 micron In(Ga)As/GaAs Quantum-Dot Lasers and their Dynamic Properties

    IEEE | British Library Conference Proceedings | 2003


    Static and Dynamic Properties of (InGa)As/GaAs Quantum Dot Lasers

    IEEE / Lasers and Electro-Optics Society | British Library Conference Proceedings | 1995


    GaAs Quantum Cascade Lasers

    IEEE | British Library Conference Proceedings | 1999


    InGaAs/GaAs Quantum Dot Lasers

    IEEE; Lasers and Electro-Optics Society | British Library Conference Proceedings | 1998


    GaAs/AlGaAs based quantum cascade lasers

    Schrenk, W. / Pflugl, C. / Golka, S. et al. | IEEE | 2004