The seperation of thin film epitaxial devices from the growth substrated is called epitaxial lift off, and the subsequent transfer and bonding of these thin film devices to smooth substrates such as Si integrated circuits is studied.<>


    Access

    Check access

    Check availability in my library

    Order at Subito €


    Export, share and cite



    Title :

    Epitaxial liftoff of GaAs detectors onto silicon integrated circuits


    Contributors:

    Published in:

    Publication date :

    1993-01-01


    Size :

    179495 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



    Epitaxial Liftoff of GaAs Detector onto Silicon Integrated Circuits

    IEEE; Lasers and Electro-Optics Society | British Library Conference Proceedings | 1993



    Demonstration Of GaAs LEDs On Si Chips Using Epitaxial Liftoff

    Ersen, A. / Yablonovitch, E. / Schnitzer, I. et al. | IEEE | 1993


    Epitaxial Liftoff Technology For OEIC's

    Yablonovitch, E. | IEEE | 1991


    Demonstration of GaAs LEDs on SI Chips Using Epitaxial Liftoff

    IEEE; Lasers and Electro-Optics Society / IEEE; Components, Hybrids and Manufacturing Technology Society | British Library Conference Proceedings | 1993