Methodologies have been evolved to grow optical quality nanostructures of the 3.4 eV band-gap semiconductor ZnO and its doped variants with different orders of dimensionality. These nanostructures are versatile and yet under evolution for next generation UV-blue photonic and spin-photonic devices. There are pending lacunae such as reliable and enduring p-type carrier doping and large carrier mobility etc, which need further and deeper understanding of fundamental nature of ZnO as a semiconductor.


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    Title :

    Nano - ZnO in Photonics Landscape


    Contributors:
    Kukreja, L. M. (author) / Misra, P. (author) / Fallert, J. (author) / Sartor, J. (author) / Kalt, H. (author) / Klingshirn, C. (author)


    Publication date :

    2008-12-01


    Size :

    7606717 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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