Summary form only given. The development of semiconductor lasers capable of emitting at wavelengths longer than 3 /spl mu/m at high CW operating temperatures has proven to be quite challenging. To our knowledge, the best result reported previously was T/sub max/=225 K for a lead-salt device (/spl lambda/=4.2 /spl mu/m). One promising approach is the W laser, named for the shape of the conduction-band profile in its four-constituent type-II active region (e.g., InAs/GaInSb/InAs/AlSb). A recent optically-pumped W structure lased CW up to T/sub max/=220 K at /spl lambda/=3.4 /spl mu/m. We report CW operation of optically-pumped W lasers nearly to room temperature. The maximum wavelength for an interband III-V device has also been extended considerably.


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    Title :

    High-temperature continuous-wave operation of optically-pumped type-II W lasers from 3-6.3 /spl mu/m


    Contributors:
    Bewley, W.W. (author) / Felix, C.L. (author) / Vurgaftman, I. (author) / Stokes, D.W. (author) / Olafsen, L.J. (author) / Aifer, E.H. (author) / Meyer, J.R. (author) / Yang, M.J. (author) / Shanabrook, B.V. (author) / Lee, H. (author)


    Publication date :

    1999-01-01


    Size :

    149438 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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