VCSELs based on InGaAs MQW structures are already being applied in pumping of erbium doped fibre amplifiers where high brightness beams are advantageous for coupling into single mode fibres. Within this paper we will describe the first single frequency operation of a VECSEL based on a GaAs structure operating around 870 nm. Such structures are expected to be of widespread use in spectroscopic applications due to their wavelength versatility, simplicity of design and stable narrow linewidth operation.
Actively stabilised, tunable single frequency operation of a vertical external cavity surface emitting laser
1999-01-01
200818 byte
Conference paper
Electronic Resource
English
British Library Conference Proceedings | 1999
|British Library Online Contents | 2015
|Microchip Vertical External Cavity Surface-Emitting Lasers
British Library Conference Proceedings | 2003
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