A new lithographically defined self-aligned index- and current-confined all-epitaxial GaAs-based VCSEL is demonstrated. The new VCSEL is based on epitaxial regrowth, except that it also uses an intracavity phase-shifting mesa to obtain mode-confinement.


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    Title :

    All-epitaxial current- and mode-confined AlGaAs/GaAs vertical-cavity surface-emitting laser


    Contributors:
    Lu, D. (author) / Ahn, J. (author) / Deppe, D.G. (author)


    Publication date :

    2004-01-01


    Size :

    104602 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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