Ultrafast charge carrier dynamics in semiconductoring materials ultimately determine the performance of photoconductive terahertz (THz) emitters and receivers. Ion implantation of III-V semiconductors allows carrier dynamics to be tailored for a particular application, and thus the technique is increasingly being applied to the development of advanced materials for terahertz photonics. In this talk I will briefly introduce the technique of ion implantation and review some recent applications in THz photonics. I will then present time resolved conductivity studies of GaAs:As+, InGaAs:Fe+, InP:O+ and InP:Fe+ and relate these results to improved terahertz emitter and detector performance.


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    Title :

    THz Emitters and Detectors Based on Ion Implanted III-V Semiconductors


    Contributors:
    Lloyd-Hughes, J. (author) / Fu, L. (author) / Castro-Camus, E. (author) / Merchant, S. (author) / Tan, H. H. (author) / Jagadish, C. (author) / Johnston, M. B. (author)


    Publication date :

    2006-09-01


    Size :

    1311194 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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