We have used a three-dimensional pseudo-classical Monte Carlo simulation to investigate the effects of As/sup +/ ion-implantation on pulsed terahertz radiation emitters. Devices based on surface-field emitters and photoconductive switches have been modelled. Two implantations of As/sup +/ ions at 1.0 MeV and 2.4 MeV were found to produce a uniform distribution of vacancies over the volume of GaAs contributing to THz generation in these devices. We calculate that ion-implantation increases the THz bandwidth of the devices with the cost of decreasing the spectral intensity at lower THz frequencies.


    Access

    Check access

    Check availability in my library

    Order at Subito €


    Export, share and cite



    Title :

    Simulation and optimization of arsenic-implanted THz emitters


    Contributors:


    Publication date :

    2004-01-01


    Size :

    159396 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English