This report discusses the growth of new strain-balanced InAsP, InP, and InGaAs multiple quantum well structures with +2.0% strained InAsP wells, InP barriers, and -2.0% strained InGaAs layers for mid-infrared quantum well infrared photodetectors.


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    Title :

    Growth of strain-balanced InAsP/InP/InGaAs multiple quantum well structures for mid-infrared photodetectors


    Contributors:
    Wada, M. (author) / Araki, S. (author) / Kudou, T. (author) / Ueda, T. (author)


    Publication date :

    2001-01-01


    Size :

    228347 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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