Semiconductor ring lasers with a threshold current as low as 12.5mA have been fabricated in GaAs/AlGaAs. The excess bending loss is calculated to 3dB/360/spl deg/ and found to be independent of the radius between 30p/spl mu/ and 145/spl mu/m. Kinks in the L-1 curve are explained by temperature-induced shifts of the mode position.


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    Title :

    Very low threshold current operation of semiconductor ring lasers


    Contributors:


    Publication date :

    1992-01-01


    Size :

    181963 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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