Summary form only given. Photorefractive epitaxial devices are band-gap engineered, high speed, real-time holograms that operate by a combination of charge transport and resonant electrooptic nonlinearities in semiconductors. In this work we report successful demonstration of a number of monolithic photorefractive devices consisting of an MQW photorefractive device structure on a GaAlAs-AlAs quarter-wave stack mirror.


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    Title :

    Monolithic p-i-n GaAlAs photorefractive devices


    Contributors:
    Tayebati, P. (author) / Hantzis, C. (author) / Sacks, R.N. (author)


    Publication date :

    1996-01-01


    Size :

    203688 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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