The high single-mode yield and stability of partly gain-coupled DFB lasers with periodically etched quantum wells is reviewed and explained by an amplified spontaneous emission DFB laser model, taking into account quantum well physics.
Partly gain-coupled DFB lasers with periodically etched quantum wells
1996-01-01
190550 byte
Conference paper
Electronic Resource
English
Partly Gain-Coupled DFB Lasers with Periodically Etched Quantum Wells
British Library Conference Proceedings | 1996
|Semiconductor lasers with dry-etched facets [2153-21]
British Library Conference Proceedings | 1994
|