An efficient laser structure was realized using highly strained InGaAs quantum wells and thick GaAs waveguide layers. A low divergence of 20/spl deg/ FWHM and reliable 5 W output power from a 60 /spl mu/m stripe laser was achieved.
High-power, high-efficiency 1150 nm quantum well laser
2004-01-01
194660 byte
Conference paper
Electronic Resource
English
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