An efficient laser structure was realized using highly strained InGaAs quantum wells and thick GaAs waveguide layers. A low divergence of 20/spl deg/ FWHM and reliable 5 W output power from a 60 /spl mu/m stripe laser was achieved.


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    Title :

    High-power, high-efficiency 1150 nm quantum well laser


    Contributors:
    Erbert, G. (author) / Bugge, F. (author) / Fricke, J. (author) / Ressel, P. (author) / Staske, R. (author) / Sumpf, B. (author) / Wenzel, H. (author) / Weyers, M. (author) / Trankle, G. (author)


    Publication date :

    2004-01-01


    Size :

    194660 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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    High-Power, High-Efficient 1150nm Quantum Well Laser

    Institute of Electrical and Electronics Engineers | British Library Conference Proceedings | 2004



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