We demonstrated, for the first time, long wavelength InGaAs/InGaAsP VCSELs with strain-compensated multiple quantum wells. Record low threshold pumping power and high T/sub o/ have been achieved. The exceedingly high optical gain and the capability of growing many wells relax the stringent requirement on mirror reflectivity making strain-compensated multiple quantum wells attractive for long wavelength VC-SELs.


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    Title :

    Low threshold 1.59 /spl mu/m vertical-cavity surface-emitting lasers with strain-compensated multiple quantum wells


    Contributors:
    Lin, C.H. (author) / Chua, C.L. (author) / Zhua, Z.-H. (author) / Bhat, R. (author) / Ejeckam, F.E. (author) / Wu, T.C. (author) / Lo, Y.H. (author)

    Published in:

    Proceedings of LEOS'94 ; 1 ; 252-253 vol.1


    Publication date :

    1994-01-01


    Size :

    173104 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



    Low Threshold 1.59 m Vertical-Cavity Surface-Emitting Lasers with Strain-Compensated Multiple Quantum Wells

    IEEE; Lasers and Electro-Optics Society | British Library Conference Proceedings | 1994




    Long Wavelength Vertical Cavity Laser Using Strain- Compensated Multiple Quantum Wells on GaAs Substrates

    IEEE; Lasers and Electro-Optics Society | British Library Conference Proceedings | 1994


    High speed intracavity-contacted vertical cavity surface emitting lasers with separated quantum wells

    Lysak, V. V. / Safonov, I. M. / Song, Y. M. et al. | British Library Online Contents | 2008