This paper studies the self-organized iron silicide nano dots on silicon [001] substrate. In the experiment, self-aligned (1D) iron disilicide quantum dots have been successfully grown by a UHV electron gun evaporation system with vacuum level better that 10/sup -9/ torr, using either Si/sub x/Ge/sub 1-x/ or strained Si as a substrate. JEOL 2010 and 4000EX transmission electron microscopes, operating at 200 and 400 KeV, were used to study the microstructures.


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    Title :

    Self-organized iron silicide nano dots on silicon [001] substrate


    Contributors:
    Chou, L.J. (author) / Chuen, Y.L. (author)


    Publication date :

    2003-01-01


    Size :

    104030 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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