This paper describes the design, simulation and measurements of a 2025 to 2120 MHz single stage Pseudomorphic High Electron Mobility Transistor (pHEMT) Low Noise Amplifier (LNA), intended for use in a TT&C receiver in low Earth orbit (LEO) satellite. The LNA has been simulated with software and the results show that it provides a gain of more than 10 dB, a noise figure below 0.58 dB and VSWR less than 1:1.35. The circuit is designed on Roger's Duroid 5880 microwave laminate. The power consumption is 27 mW at V/sub DD/=12 V.


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    Title :

    S-band low noise amplifier for TT&C receiver in LEO satellites


    Contributors:


    Publication date :

    2005-01-01


    Size :

    555658 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English




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