This paper describes the design, simulation and measurements of a 2025 to 2120 MHz single stage Pseudomorphic High Electron Mobility Transistor (pHEMT) Low Noise Amplifier (LNA), intended for use in a TT&C receiver in low Earth orbit (LEO) satellite. The LNA has been simulated with software and the results show that it provides a gain of more than 10 dB, a noise figure below 0.58 dB and VSWR less than 1:1.35. The circuit is designed on Roger's Duroid 5880 microwave laminate. The power consumption is 27 mW at V/sub DD/=12 V.
S-band low noise amplifier for TT&C receiver in LEO satellites
2005-01-01
555658 byte
Conference paper
Electronic Resource
English
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