We discuss recent progress on nanoprobing techniques for quantum dots using low-temperature near-field spectroscopy. We present measurements for GaAs quantum dots which are fabricated by the selective epitaxial growth on SiO/sub 2/-patterned GaAs (100) substrates by metal organic chemical vapor deposition. Photoluminescence spectra are reported and carrier diffusion monitoring is carried out by varying the intensity of the excitation light.


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    Title :

    Low-temperature near-field spectroscopy of quantum dots


    Contributors:
    Arakawa, Y. (author) / Toda, Y. (author) / Nagamune, Y. (author) / Ohtsu, M. (author)


    Publication date :

    1996-01-01


    Size :

    209290 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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