We discuss recent progress on nanoprobing techniques for quantum dots using low-temperature near-field spectroscopy. We present measurements for GaAs quantum dots which are fabricated by the selective epitaxial growth on SiO/sub 2/-patterned GaAs (100) substrates by metal organic chemical vapor deposition. Photoluminescence spectra are reported and carrier diffusion monitoring is carried out by varying the intensity of the excitation light.
Low-temperature near-field spectroscopy of quantum dots
1996-01-01
209290 byte
Conference paper
Electronic Resource
English
Low Temperature Near-Field Spectroscopy of Quantum Dots
British Library Conference Proceedings | 1996
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