High-speed operation of InGaAs/InGaAsP strained-layer MQW lasers has been achieved at 70 /spl deg/C under zero-bias condition by optimizing the SCH structure.
High-speed operation of strained InGaAs/InGaAsP MQW lasers
1992-01-01
167064 byte
Conference paper
Electronic Resource
English
High-Speed Operation of Strained InGaAs/InGaAsP MQW Lasers
British Library Conference Proceedings | 1992
|Characteristic analysis of InGaAs/InGaAsP strained quantum well lasers
British Library Online Contents | 1997
|Auger Recombination in Strained and Unstrained InGaAs/InGaAsP Multiple Quantum Well Lasers
British Library Conference Proceedings | 1992
|1.48-m InGaAs/InGaAsP separated confinement strained layer multiple quantum well lasers [2886-559]
British Library Conference Proceedings | 1996
|