Ge:Ga is a widely used detector material for applications at terahertz frequencies. Its response ranges from about 40 /spl mu/m -120 /spl mu/m. If a compressive force is applied to the crystal the response shifts to about 100 /spl mu/m - 240 /spl mu/m. We report on a long wavelength, sub-terahertz response >300 /spl mu/m. This response can be attributed to transitions from excited Ga states into the valence band. The results indicate that a cascade type of relaxation exists in Ge:Ga at 4.5 K.


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    Title :

    Sub-terahertz response of stressed and unstressed Ge:Ga photoconductive detectors


    Contributors:
    Hubers, H.-W. (author) / Pavlov, S.G. (author) / Holldack, K. (author) / Kuske, P. (author) / Schade, U. (author) / Wustefeld, G. (author)


    Publication date :

    2004-01-01


    Size :

    132783 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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