In this paper we have investigated that the ionic irradiation of InGaAs layers provide sub-picosecond carrier lifetime while preserving good electrical properties of the material. Photoconductor based on ion-irradiated InGaAs exhibits a 2.2ps electrical pulse with an amplitude of 0.65 Volts for 3 Volts polarization. So such photoconductive switches are good candidates to test high bandwidth telecom devices.
2.2 ps electrical pulse generated from 1.55 /spl mu/m optically-triggered ion-irradiated photoconductive switch
2003-01-01
115231 byte
Conference paper
Electronic Resource
English
British Library Conference Proceedings | 2003
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