In this paper we have investigated that the ionic irradiation of InGaAs layers provide sub-picosecond carrier lifetime while preserving good electrical properties of the material. Photoconductor based on ion-irradiated InGaAs exhibits a 2.2ps electrical pulse with an amplitude of 0.65 Volts for 3 Volts polarization. So such photoconductive switches are good candidates to test high bandwidth telecom devices.


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    Title :

    2.2 ps electrical pulse generated from 1.55 /spl mu/m optically-triggered ion-irradiated photoconductive switch


    Contributors:
    Jouland, L. (author) / Mangeney, J. (author) / Lourtioz, J.-M. (author) / Crozat, P. (author)


    Publication date :

    2003-01-01


    Size :

    115231 byte





    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English