We demonstrate noncontact measurements of electrical properties of GaN thin films using the time domain spectroscopy in the THz frequency region (THz-TDS). The carrier density and temperature dependence of DC resistivity and mobility of the GaN films are investigated.


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    Title :

    Electrical characterization of GaN thin films using terahertz-time domain spectroscopy


    Contributors:
    Nagashima, T. (author) / Takata, K. (author) / Hangyo, M. (author)


    Publication date :

    2002-01-01


    Size :

    134879 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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