We report on the fabrication of 980 nm InGaAs-AlGaAs lasers with a specially designed cladding structure. For a 2.5 /spl mu/m wide ridge waveguide structure, the far field pattern has a vertical divergence of only 13/spl deg/ and a lateral divergence of 8/spl deg/. Meanwhile, the threshold current can remain acceptably low. In addition, with another design, a record small vertical far field angle of 11/spl deg/ was obtained.


    Access

    Check access

    Check availability in my library

    Order at Subito €


    Export, share and cite



    Title :

    980 nm InGaAs/AlGaAs quantum well lasers with extremely low beam divergence


    Contributors:
    Shun-Tung Yen (author) / Gray Lin (author) / Der-Cherng Liu (author) / Chia-Ming Tsai (author) / Chien-Ping Lee (author)


    Publication date :

    1996-01-01


    Size :

    165378 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



    980 nm InGaAs/AlGaAs Quantum Well Lasers with Extremely Low Beam Divergence

    IEEE; Lasers and Electro-Optics Society | British Library Conference Proceedings | 1996


    Extremely Low-Threshold Current Density InGaAs/AlGaAs Quantum-Well Lasers on Silicon

    Wang, Jun / Ren, Xiaomin / Deng, Can et al. | British Library Online Contents | 2015


    Design and fabrication of 980-nm InGaAs/A1GaAs quantum well lasers with low beam divergence [2886-535]

    Yang, G. / Xu, J. / Xu, Z. et al. | British Library Conference Proceedings | 1996



    Low Threshold InGaAs-AlGaAs-GaAs Strained-Layer Quantum Well Heterostructure Square Ring Lasers

    IEEE; Lasers and Electro-Optics Society | British Library Conference Proceedings | 1993