The initial growth of nickel metal induced lateral crystallization of amorphous silicon was studies by high resolution transmission electron microscopy (HRTEM). Previous work by different groups reported that the extensive crystallized silicon grows by means of the thin needle-like crystallites of [110] orientation, which advance along the <111> directions within the film plane. In our study, growing of a [2~11] orientation crystallite is found at the initial stage of crystallization and with further growth, the [110]-oriented crystallites take place along with residual [ 2~11]-oriented crystallites.


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    Title :

    Atomic structure evolution of the mechanism for nickel induced lateral crystallization of amorphous silicon


    Contributors:
    Chi-Pin Lu, (author) / Li-Jen Chou, (author)


    Publication date :

    2003-01-01


    Size :

    71553 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English