Slow light enhancement via a nanostructured one-dimensional (1D) periodic waveguide is exploited to demonstrate up to 40 Gb/s modulation in a CMOS compatible 500 μm-long silicon electro-optical device based on carrier depletion in a pn junction.
Enhancing the performance of carrier depletion based silicon electro-optical modulators via slow light propagation
2011-09-01
1443733 byte
Conference paper
Electronic Resource
English
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