The present data confirm theoretical predictions that semiconductor lasers based on type II InAs-InGaSb-InAs-AlSb QWs should have significant advantages over other structures in the MIR spectral region, due to both improved carrier confinement and the potential of significant Auger suppression.


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    Title :

    Room-temperature low-threshold type-II quantum-well lasers at 4.5 /spl mu/m


    Contributors:
    Chi Yan (author) / Gianardi, D.M. (author) / Mcdaniel, D.L. (author) / Falcon, M. (author) / Chih-Hsiang Lin (author) / Murry, S.J. (author) / Yang, R.Q. (author) / Pei, S.S. (author)


    Publication date :

    1997-01-01


    Size :

    128415 byte





    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



    Room-Temperature Low-Threshold Type-II Quantum-Well Lasers at 4.5 m

    IEEE; Lasers and Electro-Optics Society | British Library Conference Proceedings | 1997


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