The present data confirm theoretical predictions that semiconductor lasers based on type II InAs-InGaSb-InAs-AlSb QWs should have significant advantages over other structures in the MIR spectral region, due to both improved carrier confinement and the potential of significant Auger suppression.
Room-temperature low-threshold type-II quantum-well lasers at 4.5 /spl mu/m
1997-01-01
128415 byte
Conference paper
Electronic Resource
English
Room-Temperature Low-Threshold Type-II Quantum-Well Lasers at 4.5 m
British Library Conference Proceedings | 1997
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