We report the fabrication and characterization of two-dimensional silicon-based photonic crystal structures realized by deep reactive ion etching method. Photonic crystals of square and triangular lattices with very high aspect ratios up to 33 have been achieved. Photonic bandgap behaviors are identified by the transmission and reflection spectra measured by using a Fourier transform infrared spectrometer. The experiment results are in good agreement with calculated band structures.


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    Title :

    Fabrication and optical property of two-dimensional infrared photonic crystals by deep reactive ion etching in Si


    Contributors:
    Mei Zhou, (author) / Xiao-Shuang Chen, (author) / Yong Zeng, (author) / Jing Xu, (author) / Shao-Wei Wang, (author) / Wei Lu, (author)


    Publication date :

    2004-01-01


    Size :

    193806 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English




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