Summary form only given. The numerical investigations are based on a microscopic many-body theory which allows one to compute the linear and nonlinear optical properties of semiconductor superlattices in the presence of homogeneous electric fields applied in the growth direction. The THz-emission due to the field-driven dynamics of photoexcited carriers is investigated for the combined action of static and alternating fields. The applied field is written as F(t)=F/sub 0/+F/sub 1/ cos(/spl omega//sub L/t). For such a driving field it was shown within a simple model that the equations governing the intraband dynamics in the field-driven superlattice should be analogous to the ones describing the superconducting Josephson junction. The transport properties in this regime can be described by the picture of multi-photon-assisted tunneling between Wannier-Stark states. It is shown that the THz-emission spectroscopy gives direct access to transport in this regime.


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    Title :

    THz emission from photoexcited semiconductor superlattices with applied AC and DC electric fields


    Contributors:
    Meier, T. (author) / Thomas, P. (author) / Koch, S.W. (author)


    Publication date :

    1999-01-01


    Size :

    145897 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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