The dynamics of the establishment and stabilization of mode-locking have been investigated, and the ratio of the whole cavity length (L) to DBR length (L/sub DBR/) exerts a significant influence on harmonic mode locking when the facet reflectivities on the absorber and DBR sides of the laser diode are less than 30%. These results are in agreement with previous observations, and are reported here for the first time to the best of our knowledge. The mode-locked semiconductor laser diode length L, used in our simulations has gain section length (L/sub g/), absorber section length (L/sub l/), and DBR section length (L/sub DBR/). The gain and saturable absorber sections have the same modal index of 3.461, and are forward biased, and grounded or reverse biased respectively.


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    Title :

    High rate pulses from mode-locked semiconductor laser diodes with DBR


    Contributors:
    Fuyun Lu, (author) / Freking, R. (author) / Gopinath, A. (author)


    Publication date :

    1996-01-01


    Size :

    142678 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



    High Rate Pulses from Mode-Locked Semiconductor Laser Diodes with DBR

    IEEE; Lasers and Electro-Optics Society | British Library Conference Proceedings | 1996





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