This paper presents VCSELs in the InGaAlAs-InP system that have been realized from 1.31 /spl mu/m to 1.8 /spl mu/m enabling the buried tunnel junction technology with particular emphasis on output power, operation temperature and modulation speed at 1.55 /spl mu/m, aiming for 10 Gbit/s transmission.


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    Title :

    InP-based vertical-cavity surface-emitting lasers with high output power and large modulation bandwidth


    Contributors:
    Shau, R. (author) / Bohm, G. (author) / Kohler, F. (author) / Amann, M.-C. (author)


    Publication date :

    2002-01-01


    Size :

    116018 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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