This paper reports the progress in D-band CW silicon IMPATT diode. The small-signal. computer simulation of a diode has been performed. The preliminary experiments of the single-drift IMPATT diode show a aw output power of 73 mW at 116.7GHz and 34mW at 126GHz, respectively.
D - band silicon impatt diode
1989-01-01
161552 byte
Conference paper
Electronic Resource
English
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