This paper reports the progress in D-band CW silicon IMPATT diode. The small-signal. computer simulation of a diode has been performed. The preliminary experiments of the single-drift IMPATT diode show a aw output power of 73 mW at 116.7GHz and 34mW at 126GHz, respectively.


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    Title :

    D - band silicon impatt diode


    Contributors:


    Publication date :

    1989-01-01


    Size :

    161552 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English




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