Using ultrafast laser pulses, emission of THz radiation from InAs films grown on Si substrates is investigated. THz radiation from the InAs films with different film-thickness are measured in transmission geometry and compared to that of a bulk InAs substrate in the reflection geometry. The strongest THz emission is found from the thickest 520-nm film.
Terahertz radiation from InAs film on Si substrate
2004-01-01
157308 byte
Conference paper
Electronic Resource
English
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