Using ultrafast laser pulses, emission of THz radiation from InAs films grown on Si substrates is investigated. THz radiation from the InAs films with different film-thickness are measured in transmission geometry and compared to that of a bulk InAs substrate in the reflection geometry. The strongest THz emission is found from the thickest 520-nm film.


    Access

    Check access

    Check availability in my library

    Order at Subito €


    Export, share and cite



    Title :

    Terahertz radiation from InAs film on Si substrate


    Contributors:
    Que, C.T. (author) / Tani, M. (author) / Edamura, T. (author) / Nakajima, M. (author) / Hangyo, M. (author)


    Publication date :

    2004-01-01


    Size :

    157308 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



    Modeling of Terahertz Radiation from InSb and InAs

    Liu, D. f. / Tan, Y. Z. | British Library Online Contents | 2005


    Monte Carlo Study of Terahertz Radiation from InAs

    Liu, D. / Xu, L. | British Library Online Contents | 2005


    Absorption of Intense Terahertz Radiation in InAs/AlSb Heterojunctions

    Cao, J. C. / Lei, X. L. / IEEE | British Library Conference Proceedings | 2002



    Terahertz emission from (100)p-InAs

    Smith, M.L. / Mendis, R. / Vickers, R.E.M. et al. | IEEE | 2005