Crystalline silicon single quantum wells were fabricated by high temperature thermal oxidation of ELTRAN silicon-on-insulator (SOI) wafers. The Si layer thickness enclosed by thermal SiO/sub 2/ ranges from 1.1 to 4.3 nm, measured by high resolution transmission electron microscopy (HRTEM). Si thickness dependent luminescence in SiO/sub 2//Si/SiO/sub 2/ quantum wells was observed for the samples with 1.1 nm to 2.7 nm thick Si. Luminescent peak energy varies from 730 nm to 920 nm without interface-mediated luminescence.


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    Title :

    Optical transitions from SiO/sub 2//crystalline Si/SiO/sub 2/ quantum wells


    Contributors:
    Cho, E.C. (author) / Reece, P. (author) / Green, M.A. (author) / Corkish, R. (author) / Gal, M. (author)


    Publication date :

    2002-01-01


    Size :

    320888 byte





    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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