The /spl delta/-doped GaAs/Al/sub x/Ga/sub 1-x/As superlattice samples are grown by molecular beam epitaxy. The current- voltage, l(V). characteristics of the samples are measured at 1.5 K. The I(V) curves show the current-plateaus corresponding to the formation of the low- and high-electric field domains due to the ground state resonance and the first excited state to ground state resonance, respectively, in the quantum well. In addition to the typical sawtooth-like current branches, a new small current peak is observed accompanying each sawtooth-like current branch in our samples. Possible origins of the additional peaks are discussed in terms of cross-domain boundary tunneling and phonon emissions.


    Access

    Check access

    Check availability in my library

    Order at Subito €


    Export, share and cite



    Title :

    The current-voltage characteristics of weakly coupled /spl delta/-doped GaAs/Al/sub x/Ga/sub 1-x/As superlattices


    Contributors:
    Wang, J.N. (author) / Hai, G.Q. (author) / Dai, J.M. (author) / He, H.T. (author) / Liang, X.G. (author) / Wang, Y.Q. (author) / Ge, W.K. (author) / Liu, H.C. (author) / Wasilewski, Z.R. (author)


    Publication date :

    2002-01-01


    Size :

    206288 byte





    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



    The Current-Voltage Characteristics of Weakly Coupled d-Doped GaAs/Al~xGa~1~-~xAs Superlattices

    Wang, J. N. / Hai, G. Q. / Dai, J. M. et al. | British Library Conference Proceedings | 2002


    Photoluminescence of the GaAs Superlattices with Quasi-Delta-Doped Layers

    Zvonkov, B. N. / Aleshkin, V. Y. / Morozov, S. V. et al. | British Library Conference Proceedings | 2003


    Photoluminescence of the GaAs superlattices with quasidelta-doped layers

    Zvonkov, B.N. / Aleshkin, V.Ya. / Morozov, S.V. et al. | IEEE | 2003


    Thermal diffusivity of GaAs/AlAs superlattices

    Chen, G. / Yu, X. | AIAA | 1994