We present a 1.55 /spl mu/m laser grown on GaAs by molecular beam epitaxy. The active layer was a single GaInNAsSb quantum well surrounded by strain-compensating GaNAs barriers. The room temperature threshold current density was 2.4 kA/cm/sup 2/, lasing at 1.553 /spl mu/m.


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    Title :

    1.55 /spl mu/m GalnNAsSb lasers on GaAs


    Contributors:
    Bank, S.R. (author) / Wistey, M.A. (author) / Goddard, L.L. (author) / Yuen, H.B. (author) / Bae, H.P. (author) / Harris, J.S. (author)


    Publication date :

    2005-01-01


    Size :

    793940 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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