We present a 1.55 /spl mu/m laser grown on GaAs by molecular beam epitaxy. The active layer was a single GaInNAsSb quantum well surrounded by strain-compensating GaNAs barriers. The room temperature threshold current density was 2.4 kA/cm/sup 2/, lasing at 1.553 /spl mu/m.
1.55 /spl mu/m GalnNAsSb lasers on GaAs
(CLEO). Conference on Lasers and Electro-Optics, 2005. ; 1 ; 89-91 Vol. 1
2005-01-01
793940 byte
Conference paper
Electronic Resource
English
1.55 mum GaInNAsSb Lasers on GaAs
British Library Conference Proceedings | 2005
|1.55 nm-wavelength CW Microchip Lasers
British Library Conference Proceedings | 1996
|Loss Analysis of 1.55m Vertical Cavity Lasers
British Library Conference Proceedings | 1996
|Ultrawide bandwidth 1.55-m lasers (Invited Paper) [2684-24]
British Library Conference Proceedings | 1996
|High-power Tunable Picosecond Lasers at 1.55 m Wavelength
British Library Conference Proceedings | 1997
|