We demonstrate an InGaAs single quantum well SESAM for operation around 1060 nm which was manufactured by MOCVD growth and ion-implantation. The results from specular reflectance as well as time resolved and fluence dependent reflectivity measurements are shown. We have used the SESAMs to mode-lock a range of low and medium power lasers at 1040 nm-1064 nm in both picosecond and femtosecond operation depending on the laser crystal, cavity arrangement and SESAM properties. In view of the greatly different gain properties of these laser crystals, ion-implantation has proved a versatile technique for tailoring of the SESAM properties to suit a particular laser material.


    Access

    Check access

    Check availability in my library

    Order at Subito €


    Export, share and cite



    Title :

    The properties of ion-implanted InGaAs single quantum-well semiconductor saturable absorber mirrors for passive mode-locking


    Contributors:


    Publication date :

    2001-01-01


    Size :

    141766 byte





    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English




    Fast quantum-dot saturable absorber for passive mode-locking of solid-state lasers

    Rafailov, E.U. / White, S.J. / Lagatsky, A.A. et al. | IEEE | 2003



    Silicon-germanium saturable absorber mirrors

    Grawert, F.J. / Akiyama, S. / Gopinath, J.T. et al. | IEEE | 2004


    Silicon-Germanium Saturable Absorber Mirrors

    Lasers and Electro-optics Society (Institute of Electrical and Electronics Engineers) | British Library Conference Proceedings | 2004