A process developed for fabricating high-quality periodically-inverted GaAs waveguides based on sublattice reversal epitaxy and regrowth technique is presented. By using this process, we can fabricate low-loss GaAs wavelength conversion devices with /spl sim/ 6 /spl mu/m QPM periods.


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    Title :

    Fabrication of periodically-inverted GaAs for quasi-phase-matching nonlinear optical devices


    Contributors:
    Matsushita, T. (author) / Tachibana, H. (author) / Koh, S. (author) / Kondo, T. (author)


    Publication date :

    2003-01-01


    Size :

    88762 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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