d/gamma is the main parameter in designing high brightness diode lasers. The two-waveguide asymmetric structures consist of an active region waveguide that includes a QW and an optical trap on the n side of the active region. The radiation field is shared between these two waveguides and correspondingly its extent in the QW relative to its overall extent in the structure is diminished.
High d/gamma ratio in 940nm two-waveguide asymmetric epitaxial structures
The 15th Annual Meeting of the IEEE Lasers and Electro-Optics Society ; 2 ; 645-646 vol.2
2002-01-01
132155 byte
Conference paper
Electronic Resource
English
ThC3 High d/gamma Ratio in 940nm Two-Waveguide Asymmetric Epitaxial Structures
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