We present selectively grown Ge p-i-n photodetectors coupled to high index contrast Si(core)/SiO2(cladding) waveguides on a silicon-on-insulator (SOI) platform. Two coupling schemes, namely butt-coupling and vertical coupling, were demonstrated in this study. With the butt-coupling scheme we have achieved a high responsivity of 1.0 A/W at 1520 nm and a 3dB bandwidth greater than 4.5 GHz at 1550 nm. With the vertical coupling scheme, where the light couples from a Si waveguide evanescently to the Ge detector on top of it, a responsivity of 0.22A/W and a 3dB bandwidth of ~1.5 GHz have been demonstrated at 1550 nm. The devices were fabricated on a standard 180 nm industrial complementary metal oxide semiconductor production (CMOS) line, and can be integrated with CMOS circuitry for electronic and photonic integrated circuits.


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    Title :

    Waveguide Integrated Ge p-i-n Photodetectors on a Silicon-on-Insulator Platform


    Contributors:
    Liu, J.f. (author) / Ahn, D. (author) / Hong, C. (author) / Pan, D. (author) / Jongthammanurak, S. (author) / Beals, M. (author) / Kimerling, L. (author) / Michel, J. (author) / Pomerene, A. (author) / Carothers, D. (author)


    Publication date :

    2006-11-01


    Size :

    3677542 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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