The experimental results of the fabricated LEDs with /spl sim/22/spl deg/ undercut side walls are reported and the performance of the fabricated undercut side wall LEDs show /spl sim/70 % enhancement in the light output. Nitride-based LEDs were achieved by controllable inductively coupled plasma reactive ion etching (ICP-RIE).


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    Title :

    InGaN-based light-emitting diode with undercut-side wall


    Contributors:
    Chih-Chiang Kao, (author) / Chu, J.T. (author) / Huang, H.W. (author) / Peng, Y.C. (author) / Yu, C.C. (author) / Hseih, Y.L. (author) / Lin, C.F. (author) / Kuo, H.C. (author) / Wang, S.C. (author)


    Publication date :

    2004-01-01


    Size :

    133553 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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