This paper reports the observations of drift in resistive states of HfO2-based Resistive Random Access Memory devices under continuous and read hammer operations. We provide possible explanations and analysis of the drift from the original state for both high and low resistance states. This work will provide a solid foundation for understanding the device performance over relatively long periods of time and under various operating conditions.


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    Title :

    Study of Drift in RRAM Devices Under Various Operating Conditions


    Contributors:
    Hochman, Brett (author) / Jha, Rashmi (author) / Leedy, Kevin (author)


    Publication date :

    2021-08-16


    Size :

    2612287 byte





    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English




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