Wide-band-gap devices such as SiC MOSFET and GaN devices have distinct advantages of high speed and lower switching loss. However, they have higher dv/dt and may cause larger EMI noise. In this paper, design of voltage slew rate on SiC MOSFET devices with soft-switching is investigated. The dv/dt of power devices in the three-phase active-clamped zero voltage switching (ZVS) inverter is analyzed. The voltage slew rate of power devices vs. resonant parameters is discussed. Then the design of dv/dt on power devices are proposed. The dv/dt design has been verified through both the simulation and the experiment on the 10 kW/100kHzSiC-based ZVS three phase inverter.


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    Title :

    Voltage Slew Rate Design With Soft Switching Technique


    Contributors:
    Li, Jialong (author) / Wu, Yuying (author) / Xu, Dehong (author)


    Publication date :

    2022-10-28


    Size :

    894754 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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